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Tunable effective g-factor in InAs nanowire quantum dots

M. T. Björk·A. Fuhrer·A. E. Hansen·M. W. Larsson·L. E. Jensen·L. Samuelson
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Abstract

We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy. The values of the electron g-factors of the first few electrons entering the dot are found to strongly depend on dot size and range from close to the InAs bulk value in large dots |g^*|=13 down to |g^*|=2.3 for the smallest dots. These findings are discussed in view of a simple model.

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M. T. Björk, A. Fuhrer, A. E. Hansen, M. W. Larsson, L. E. Jensen, L. Samuelson. 2005-07-19. Tunable effective g-factor in InAs nanowire quantum dots. https://doi.org/10.1103/physrevb.72.201307

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