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Generation of spin currents via Raman scattering

Ali Najmaie·E. Ya. Sherman·J. E. Sipe
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Abstract

We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zincblende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement.

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Ali Najmaie, E. Ya. Sherman, J. E. Sipe. 2005-08-09. Generation of spin currents via Raman scattering. https://doi.org/10.1103/physrevlett.95.056601

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