arXiv · cond-mat/0508500
Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance
Abstract
We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Yasuhiro Utsumi, Dmitri S. Golubev, Gerd Schön. 2005-08-21. Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance. https://doi.org/10.1103/physrevlett.96.086803
Cite the original work for its findings. Save a collection to share your selection of sources.