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Electrical driving single barrier spin cell

B. H. Wu·Kang-Hun Ahn
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Abstract

We propose a spin cell based on photon-assisted tunneling through a conventional semiconductor barrier. The Dresselhaus spin-orbit interaction is included to break the spin rotation symmetry. Due to the in-plane electric field induced asymmetric momentum distribution in one lead, continuous flows of spin currents are driven through a barrier by a AC field. The net charge current remains zero. The spin current via photon-assisted tunneling can be readily adjusted via tuning the AC frequency or the in-plane electric field. This device may function as an ideal spin cell to supply spin currents in the spintronics circuit.

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B. H. Wu, Kang-Hun Ahn. 2005-08-25. Electrical driving single barrier spin cell. https://arxiv.org/abs/cond-mat/0508595

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