Microwave Nanotube Transistor Operation at High Bias

Z. Yu; C. Rutherglan P. J. Burke

doi:10.1063/1.2210447

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arXiv · cond-mat/0509117

Microwave Nanotube Transistor Operation at High Bias

Z. Yu·C. Rutherglan P. J. Burke

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Abstract

We measure the small signal, 1 GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical conductance at 1 GHz is identical to the low frequency dynamical conductance, consistent with the prediction of a cutoff frequency much higher than 1 GHz. This work represents a significant step towards a full characterization of a nanotube transistor for RF and microwave amplifiers.

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Z. Yu, C. Rutherglan P. J. Burke. 2005-09-05. Microwave Nanotube Transistor Operation at High Bias. https://doi.org/10.1063/1.2210447

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