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Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass

Ying Zhang·S. Das Sarma
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Abstract

We introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized electron system. The majority-spin many-body effective mass renormalization differs by more than a factor of 2 at rs=5 between the unpolarized and the fully polarized two-dimensional system, whereas the polarization dependence (~15%) is more modest in three dimensions around metallic densities (rs~5). The spin-polarization dependence of the carrier effective mass is of significance in various spintronic applications.

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Ying Zhang, S. Das Sarma. 2005-12-15. Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass. https://doi.org/10.1103/physrevlett.95.256603

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