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Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity

Y. Y. Liao·Y. N. Chen·D. S. Chuu·T. Brandes
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Abstract

The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing deformation potential may also result in a suppression of the spin relaxation rate. For larger quantum dots, the interplay between the spin orbit interaction and Zeeman levels causes the suppression of the relaxation at several points. Furthermore, a crossover from confined to bulk-like systems is obtained by varying the width of the slab.

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Y. Y. Liao, Y. N. Chen, D. S. Chuu, T. Brandes. 2006-01-17. Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity. https://doi.org/10.1103/physrevb.73.085310

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