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Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems

J. Seebeck·T. R. Nielsen·P. Gartner·F. Jahnke
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Abstract

A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels.

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J. Seebeck, T. R. Nielsen, P. Gartner, F. Jahnke. 2006-01-13. Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems. https://doi.org/10.1002/pssc.200565227

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