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Nonexponential Relaxations in a Two-Dimensional Electron System in Silicon

J. Jaroszynski·Dragana Popovic
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Abstract

The relaxations of conductivity have been studied in a strongly disordered two-dimensional (2D) electron system in Si after excitation far from equilibrium by a rapid change of carrier density n_s at low temperatures T. The dramatic and precise dependence of the relaxations on n_s and T strongly suggests (a) the transition to a glassy phase as T->0, and (b) the Coulomb interactions between 2D electrons play a dominant role in the observed out-of-equilibrium dynamics.

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J. Jaroszynski, Dragana Popovic. 2005-09-28. Nonexponential Relaxations in a Two-Dimensional Electron System in Silicon. https://doi.org/10.1103/physrevlett.96.037403

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