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Interplay of the exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs

A. Amo·M. D. Martin·L. Vina·A. I. Toropov·K. S. Zhuravlev
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Abstract

We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition between the exciton and electron-hole pair recombination dominates the onset of the luminescence. We show that the metal-to-insulator transition, induced by temperature and/or excitation density, can be directly monitored by the carrier dynamics and the time-resolved spectral characteristics of the light emission. The dependence on carrier density of the photoluminescence rise time is strongly modified around a lattice temperature of 49 K, corresponding to the exciton binding energy (4.2 meV). In a similar way, the rise-time dependence on lattice temperature undergoes a relatively abrupt change at an excitation density of 120-180x10^15 cm^-3, which is about five times greater than the calculated Mott density in GaAs taking into account many body corrections.

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A. Amo, M. D. Martin, L. Vina, A. I. Toropov, K. S. Zhuravlev. 2005-10-26. Interplay of the exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs. https://doi.org/10.1103/physrevb.73.035205

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