Silicon nanostructures embedded in superconductor shells

Nikolay T. Bagraev; Wolfgang Gehlhoff; Leonid E. Klyachkin; Anna M. Malyarenko; Vladimir V. Romanov; Serguey A. Rykov

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Silicon nanostructures embedded in superconductor shells

Nikolay T. Bagraev·Wolfgang Gehlhoff·Leonid E. Klyachkin·Anna M. Malyarenko·Vladimir V. Romanov·Serguey A. Rykov

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Abstract

We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron of the n - type Si (100) surface. These Si - based nanostructures represent the p - type ultra-narrow self - assembled silicon quantum wells confined by the delta - barriers heavily with boron. The resistivity, thermo - emf and magnetic susceptibility studies show that the high temperature superconductivity observed seems to result from the single - hole tunnelling into the negative - U boron centres at the silicon quantum well - delta - barier interfaces.

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Nikolay T. Bagraev, Wolfgang Gehlhoff, Leonid E. Klyachkin, Anna M. Malyarenko, Vladimir V. Romanov, Serguey A. Rykov. 2006-01-11. Silicon nanostructures embedded in superconductor shells. https://arxiv.org/abs/cond-mat/0510726

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