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Atomistic simulation of light-induced changes in hydrogenated amorphous silicon

T. A. Abtew·D. A. Drabold
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Abstract

We employ ab initio molecular dynamics to simulate the response of hydrogenated amorphous silicon to light exposure (Staebler-Wronski effect). We obtain improved microscopic understanding of PV operation, compute the motion of H atoms, and modes of light-induced degradation of photovoltaics. We clarify existing models of light-induced change in aSi:H and show that the Hydrogen collision model of Branz3 is correct in essentials.

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T. A. Abtew, D. A. Drabold. 2005-10-30. Atomistic simulation of light-induced changes in hydrogenated amorphous silicon. https://doi.org/10.1088/0953-8984%2F18%2F1%2Fl01

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