Spin current as a response to external stress

Prashant Sharma

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arXiv · cond-mat/0511270

Spin current as a response to external stress

Prashant Sharma

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Abstract

It is theoretically predicted that a traveling shear wave will create a spin current in certain direct-gap (for example III-V compound) semiconductors with contributions from both the valence bands and the conduction band (for $n$-doped semiconductors). We show that this spin-current is a property of the Fermi-Dirac sea, and is controlled by a geometric phase accumulated by the strain-induced Rashba parameters in a cycle.

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Prashant Sharma. 2005-11-11. Spin current as a response to external stress. https://arxiv.org/abs/cond-mat/0511270

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