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Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices

R. G. Mani
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Abstract

We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high mobility two-dimensional electron system. In analogy to the 2D Shubnikov-de Haas effect, the characteristic field, $B_{f}$, and the period of the radiation-induced magnetoresistance oscillations appears dependent upon the component of the applied magnetic field that is perpendicular to the plane of the 2DES. In addition, we find that a parallel component, $B_{//}$, in the range of $0.6 < B_{//} < 1.2$ Tesla, at a tilt angle of $θ= 80^{0}$, leaves the oscillatory pattern essentially unchanged.

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R. G. Mani. 2005-12-13. Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices. https://doi.org/10.1103/physrevb.72.075327

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