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Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Eisuke Abe·Akira Fujimoto·Junichi Isoya·Satoshi Yamasaki·Kohei M. Itoh
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Abstract

Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear spins on the donor electron spin is systematically studied. The linewidth as a function of f shows a good agreement with theoretical analysis. We also report the phase memory time T_M of the donor electron spin dependent on both f and the crystal axis relative to the external magnetic field.

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Eisuke Abe, Akira Fujimoto, Junichi Isoya, Satoshi Yamasaki, Kohei M. Itoh. 2005-12-16. Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins. https://doi.org/10.1103/physrevb.82.121201

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