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Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier

Semion Saikin·Min Shen·Ming-Cheng Cheng
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Abstract

We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several valleys. Spin relaxation driven by the spin-orbital coupling in the semiconductor is very rapid. At T = 4.2 K, injected spin polarization decays on a distance of the order of 50 - 100 nm from the interface. This spin penetration depth reduces approximately by half at room temperature. The spin scattering length is different for different valleys.

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Semion Saikin, Min Shen, Ming-Cheng Cheng. 2005-12-16. Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier. https://doi.org/10.1088/0953-8984%2F18%2F5%2F005

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