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Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition

Yu. G. Arapov·S. V. Gudina·G. I. Harus·V. N. Neverov·N. G. Shelushinina·M. V. Yakunin·S. M. Podgornyh·E. A. Uskova·B. N. Zvonkov
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Abstract

The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0 2D metal--insulator transition. We show that the observed localization and Landau quantization is due to the Sigma_xy(T)anomalous T-dependence.

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Yu. G. Arapov, S. V. Gudina, G. I. Harus, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin, S. M. Podgornyh, E. A. Uskova, B. N. Zvonkov. 2005-12-28. Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition. https://arxiv.org/abs/cond-mat/0512678

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