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A one-dimensional model for the growth of CdTe quantum dots on Si substrates

S. C. Ferreira Jr.·S. O. Ferreira
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Abstract

Recent experiments involving CdTe films grown on Si(111) substrates by hot wall epitaxy revealed features not previously observed [S. O. Ferreira \textit{et al.}, J. Appl. Phys. \textbf{93}, 1195 (2003)]. This system, which follows the Volmer-Weber growth mode with nucleation of isolated 3D islands for less than one monolayer of evaporated material, was described by a peculiar behavior of the quantum dot (QD) size distributions. In this work, we proposed a kinetic deposition model to reproduce these new features. The model, which includes thermally activated diffusion and evaporation of CdTe, qualitatively reproduced the experimental QD size distributions. Moreover, the model predicts a transition from Stranski-Krastanow growth mode at lower temperatures to Volmer-Weber growth mode at higher ones characterized through the QD width distributions.

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S. C. Ferreira Jr., S. O. Ferreira. 2006-01-03. A one-dimensional model for the growth of CdTe quantum dots on Si substrates. https://doi.org/10.1016/j.physleta.2005.11.076

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