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Study of ion beam induced mixing in nano-layered Si/C multilayer structures

Ram Prakash·S. Amirthapandian·D. M. Phase·S. K. Deshpande·R. Kesavamoorthy·K. G. M. Nair
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Abstract

The effects of ion beam induced atomic mixing and subsequent thermal treatment in Si/C multilayer structures are investigated by use of the technique of grazing incidence X-ray diffraction (GIXRD) and Raman spectroscopy. The [Si (3.0 nm) / C (2.5 nm)]x10 /Si multilayer films were prepared by electron beam evaporation under ultra high vacuum (UHV) environment. The layer thicknesses were measured using in-situ quartz crystal oscillator. These multilayer films were subjected to 40 keV Ar+ ion irradiation with fluences 5E-16 (low fluence) and 1E-17 ions / cm2 (high fluence).The as-prepared and irradiated multilayer samples were annealed at 773 K for one hour. The GIXRD and Raman spectroscopy results reveal the formation of different phases of SiC in these multilayer structures. Deposition induced reactions at the nano-structured interface and subsequent room temperature Ar ion irradiation at low fluence result in formation of the hexagonal SiC phase. High fluence Ar+ ion irradiation and subsequent annealing at 773 K for one hour leads to precipitation of the cubic-SiC phase.

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Ram Prakash, S. Amirthapandian, D. M. Phase, S. K. Deshpande, R. Kesavamoorthy, K. G. M. Nair. 2006-01-11. Study of ion beam induced mixing in nano-layered Si/C multilayer structures. https://doi.org/10.1016/j.nimb.2005.11.044

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