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Gamma radiation exposure of MCT diode arrays

F. F. Sizov·I. O. Lysiuk·J. V. Gumenjuk-Sichevska·S. G. Bunchuk·V. V. Zabudsky
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Abstract

Investigations of electrical properties of long-wavelength infrared (LWIR) mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been performed. Resistance-area product characteristics of LWIR n{+}-p photodiodes have been investigated using microprobe technique at T=78 K before and after an exposure to various doses of gamma-radiation. The current transport mechanisms for those structures are described within the framework of the balance equation model taking into account the occupation of the trap states in the band gap.

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F. F. Sizov, I. O. Lysiuk, J. V. Gumenjuk-Sichevska, S. G. Bunchuk, V. V. Zabudsky. 2006-01-13. Gamma radiation exposure of MCT diode arrays. https://doi.org/10.1088/0268-1242%2F21%2F3%2F026

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