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Magnetophonon resonance in high density, high mobility quantum well systems

C. Faugeras·D. K. Maude·G. Martinez·L. B. Rigal·C. Proust·K. -J. Friedland·R. Hey·K. H. Ploog
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Abstract

We have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs superlattices. Two distinct MPR series are observed originating from the $Γ$ and X electrons interacting with the GaAs and AlAs longitudinal optic (LO) phonons respectively. This confirms unequivocally the presence of X electrons in the AlAs quantum well of the superlattice previously invoked to explain the high electron mobility in these structures (Friedland et al. Phys. Rev. Lett. 77,4616 (1996).

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C. Faugeras, D. K. Maude, G. Martinez, L. B. Rigal, C. Proust, K. -J. Friedland, R. Hey, K. H. Ploog. 2006-01-19. Magnetophonon resonance in high density, high mobility quantum well systems. https://arxiv.org/abs/cond-mat/0601440

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