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Hooge's Constant of Carbon Nanotube Field Effect Transistors

Masa Ishigami·J. H. Chen·E. D. Williams·D. Tobias·Y. F. Chen·M. S. Fuhrer
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Abstract

The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air.

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Masa Ishigami, J. H. Chen, E. D. Williams, D. Tobias, Y. F. Chen, M. S. Fuhrer. 2006-01-19. Hooge's Constant of Carbon Nanotube Field Effect Transistors. https://doi.org/10.1063/1.2206685

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