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arXiv · cond-mat/0601464

Domain-wall resistance in ferromagnetic (Ga,Mn)As

D. Chiba·M. Yamanouchi·F. Matsukura·T. Dietl·H. Ohno
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Abstract

A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is one order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced misstracing of the carrier spins subject to spatially varying magnetization.

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D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, H. Ohno. 2006-01-20. Domain-wall resistance in ferromagnetic (Ga,Mn)As. https://doi.org/10.1103/physrevlett.96.096602

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