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Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

M. Yamanouchi·D. Chiba·F. Matsukura·T. Dietl·H. Ohno
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Abstract

Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

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M. Yamanouchi, D. Chiba, F. Matsukura, T. Dietl, H. Ohno. 2006-01-23. Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As. https://doi.org/10.1103/physrevlett.96.096601

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