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Engineering the spatial confinement of exciton-polaritons in semiconductors

Reda Idrissi Kaitouni·Ounsi El Daif·Maxime Richard·Pierre Lugan·Augustin Baas·Thierry Guillet·François Morier-Genoud·Jean-Daniel Ganière·Jean-Louis Staehli·Vincenzo Savona·Benoît Deveaud
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Abstract

We demonstrate the spatial confinement of electronic excitations in a solid state system, within novel artificial structures that can be designed having arbitrary dimensionality and shape. The excitations under study are exciton-polaritons in a planar semiconductor microcavity. They are confined within a micron-sized region through lateral trapping of their photon component. Striking signatures of confined states of lower and upper polaritons are found in angle-resolved light emission spectra, where a discrete energy spectrum and broad angular patterns are present. A theoretical model supports unambiguously our observations.

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Reda Idrissi Kaitouni, Ounsi El Daif, Maxime Richard, Pierre Lugan, Augustin Baas, Thierry Guillet, François Morier-Genoud, Jean-Daniel Ganière, Jean-Louis Staehli, Vincenzo Savona, Benoît Deveaud. 2006-03-05. Engineering the spatial confinement of exciton-polaritons in semiconductors. https://doi.org/10.1103/physrevb.74.155311

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