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Mechanical control of spin-orbit splitting in GaAs and InGaAs epilayers

V. Sih·H. Knotz·J. Stephens·V. R. Horowitz·A. C. Gossard·D. D. Awschalom
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Abstract

Time-resolved Kerr rotation spectroscopy as a function of pump-probe distance, voltage and magnetic field is used to measure the momentum-dependent spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples can be reproducibly controlled in the cryostat using three- and four-point bending applied with a mechanical vise. We find that the magnitude of the spin splitting increases linearly with applied tension and voltage. A strain-drift diffusion model is used to relate the magnitude of the measured spin-orbit splitting to the amount of strain in the sample.

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V. Sih, H. Knotz, J. Stephens, V. R. Horowitz, A. C. Gossard, D. D. Awschalom. 2006-03-29. Mechanical control of spin-orbit splitting in GaAs and InGaAs epilayers. https://doi.org/10.1103/physrevb.73.241316

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