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Highly-ordered graphene for two dimensional electronics

J. Hass·C. A. Jeffrey·R. Feng·T. Li·X. Li·Z. Song·C. Berger·W. A. de Heer·P. N. First·E. H. Conrad
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Abstract

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.

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J. Hass, C. A. Jeffrey, R. Feng, T. Li, X. Li, Z. Song, C. Berger, W. A. de Heer, P. N. First, E. H. Conrad. 2006-04-07. Highly-ordered graphene for two dimensional electronics. https://doi.org/10.1063/1.2358299

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