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Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film

S. Yoshii·S. Sonoda·T. Yamamoto·T. Kashiwagi·M. Hagiwara·Y. Yamamoto·Y. Akasaka·K. Kindo·H. Hori
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Abstract

A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the high-temperature ferromagnetic state is significantly suppressed below 10 K, accompanied by an increase of the electrical resistivity with decreasing temperature. This observation clearly demonstrates a close relation between the ferromagnetism with extremely high-Tc and the carrier transport in the Mn-doped GaN film.

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S. Yoshii, S. Sonoda, T. Yamamoto, T. Kashiwagi, M. Hagiwara, Y. Yamamoto, Y. Akasaka, K. Kindo, H. Hori. 2006-04-28. Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film. https://doi.org/10.1209/0295-5075%2F78%2F37006

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