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Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors

R. Oszwałdowski·J. A. Majewski·T. Dietl
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Abstract

Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72, 205322 (2005)] is employed. The model combines the disorder-free Landauer-Büttiker formalism with the tight-binding description of the host band structure. The obtained results show how much the spherical 4x4 kp model [Nguyen, Shchelushkin, and Brataas, cond-mat/0601436] overestimates DWR in the adiabatic limit, and reveal the dependence of DWR on the magnetization profile and crystallographic orientation of the wall.

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R. Oszwałdowski, J. A. Majewski, T. Dietl. 2006-05-09. Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors. https://doi.org/10.1103/physrevb.74.153310

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