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Spin interference in silicon three-terminal one-dimensional rings

N. T. Bagraev·N. G. Galkin·W. Gehlhoff·L. E. Klyachkin·A. M. Malyarenko·I. A. Shelykh
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Abstract

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the bias voltage that are applied perpendicularly to the plane of the double-slit ring. Firstly, the amplitude and phase sensitivity of the 0.7(2e^2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction. Secondly, the quantum scatterers connected to two one-dimensional leads and the quantum point contact inserted are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations.

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N. T. Bagraev, N. G. Galkin, W. Gehlhoff, L. E. Klyachkin, A. M. Malyarenko, I. A. Shelykh. 2006-05-12. Spin interference in silicon three-terminal one-dimensional rings. https://doi.org/10.1088/1742-6596%2F61%2F1%2F012

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