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Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

D. R. McCamey·H. Huebl·M. S. Brandt·W. D. Hutchison·J. C. McCallum·R. G. Clark·A. R. Hamilton
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Abstract

We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.

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D. R. McCamey, H. Huebl, M. S. Brandt, W. D. Hutchison, J. C. McCallum, R. G. Clark, A. R. Hamilton. 2006-05-22. Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures. https://doi.org/10.1063/1.2358928

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