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Electron Scattering in Thin GaAs Quantum Wires

Dmitry Pozdnyakov·Vadim Galenchik·Andrei Borzdov
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Abstract

In this paper the scattering rates of electrons in thin free standing GaAs quantum wires in the electric quantum limit are calculated self-consistently taking into account the collisional broadening caused by scattering processes. The following mechanisms of scattering are considered: one-dimensional acoustic and polar optical phonons, surface roughness and ionized impurities. The non-parabolicity of electron energy spectrum is also taken into account.

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Dmitry Pozdnyakov, Vadim Galenchik, Andrei Borzdov. 2006-06-09. Electron Scattering in Thin GaAs Quantum Wires. https://arxiv.org/abs/cond-mat/0606239

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