SearcharxivSearch

arXiv · cond-mat/0606336

Time Reversal Polarization and a Z_2 Adiabatic Spin Pump

Abstract

We introduce and analyze a class of one dimensional insulating Hamiltonians which, when adiabatically varied in an appropriate closed cycle, define a "$Z_2$ pump". For an isolated system a single closed cycle of the pump changes the expectation value of the spin at each end even when spin orbit interactions violate the conservation of spin. A second cycle, however returns the system to its original state. When coupled to leads, we show that the $Z_2$ pump functions as a spin pump in a sense which we define, and transmits a finite, though non quantized spin in each cycle. We show that the $Z_2$ pump is characterized by a $Z_2$ topological invariant that is analogous to the Chern invariant that characterizes a topological charge pump. The $Z_2$ pump is closely related to the quantum spin Hall effect, which is characterized by a related $Z_2$ invariant. This work presents an alternative formulation which clarifies both the physical and mathematical meaning of that invariant. A crucial role is played by time reversal symmetry, and we introduce the concept of the time reversal polarization, which characterizes time reversal invariant Hamiltonians and signals the presence or absence of Kramers degenerate end states. For non interacting electrons we derive a formula for the time reversal polarization which is analogous to the Berry's phase formulation of the charge polarization. For interacting electrons, we show that abelian bosonization provides a simple formulation of the time reversal polarization. We discuss implications for the quantum spin Hall effect, and argue in particular that the $Z_2$ classification of the quantum spin Hall effect is valid in the presence of electron electron interactions.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Liang Fu, C. L. Kane. 2006-06-14. Time Reversal Polarization and a Z_2 Adiabatic Spin Pump. https://doi.org/10.1103/physrevb.74.195312

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall