Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-$T_c$ superconductors

Tatsuya Honma; Pei Herng Hor

doi:10.1016/j.physc.2007.04.079

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Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-$T_c$ superconductors

Tatsuya Honma·Pei Herng Hor

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Abstract

We propose that physical properties for the high temperature superconductors can be addressed by either a two-dimensional planar hole-doping concentration ($P_{pl}$) or an effective three-dimentional hole-doping concentration ($P_{3D}$). We find that superconducting transition temperature ($T_c$) exhibits a universal dome-shaped behavior in the $T_c$ $vs.$ $P_{3D}$ plot with a universal optimal doping concentration at $P_{3D}$ $\sim$ 1.6 $\times$ 10$^{21}$ cm$^{-3}$ for the single-layer high temperature superconductors.

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Tatsuya Honma, Pei Herng Hor. 2006-12-16. Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-$T_c$ superconductors. https://doi.org/10.1016/j.physc.2007.04.079

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