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Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities

F. V. Kyrychenko·C. A. Ullrich
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Abstract

In III-V dilute magnetic semiconductors (DMSs) such as Ga$_{1-x}$Mn$_x$As, the impurity positions tend to be correlated, which can drastically affect the electronic transport properties of these materials. Within the memory function formalism we have derived a general expression for the current relaxation kernel in spin and charge disordered media and have calculated spin and charge scattering rates in the weak-disorder limit. Using a simple model for magnetic impurity clustering, we find a significant enhancement of the charge scattering. The enhancement is sensitive to cluster parameters and may be controllable through post-growth annealing.

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F. V. Kyrychenko, C. A. Ullrich. 2006-07-07. Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities. https://doi.org/10.1103/physrevb.75.045205

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