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Gate capacitance of back-gated nanowire field-effect transistors

Olaf Wunnicke
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Abstract

Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate model''. Completely embedded and non-embedded NW-FETs are considered. It is shown that the use of the analytical expressions also for non-embedded NW-FETs gives carrier mobilities that are nearly two times too small. Furthermore, the electric field amplification of non-embedded NW-FETs and the influence of the cross-section shape of the nanowires are discussed.

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Olaf Wunnicke. 2006-07-14. Gate capacitance of back-gated nanowire field-effect transistors. https://doi.org/10.1063/1.2337853

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