Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]

Michael E. Flatté; Kimberley C. Hall

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Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]

Michael E. Flatté·Kimberley C. Hall

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Abstract

A recent e-print (cond-mat/0604532) presented a proposed Comment to Applied Physics Letters on our publication Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260. Here is our Response. As the proposed Comment has now been rejected by Applied Physics Letters, neither the Comment nor the Response will be published in Applied Physics Letters in this form.

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Michael E. Flatté, Kimberley C. Hall. 2006-07-18. Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]. https://arxiv.org/abs/cond-mat/0607432

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