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Low-dimensional light-emitting transistor with tunable recombination zone

B. Kaestner·J. Wunderlich·T. J. B. M. Janssen
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Abstract

We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and holes can be directed to the same area by drain and gate voltages, defining a recombination zone tunable in size and position. It could therefore provide an architecture for probing low-dimensional devices by analysing the emitted light of the recombination zone.

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B. Kaestner, J. Wunderlich, T. J. B. M. Janssen. 2006-08-17. Low-dimensional light-emitting transistor with tunable recombination zone. https://doi.org/10.1080/09500340600759605

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