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All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode

Peifeng Chen·Juergen Moser·Philipp Kotissek·Janusz Sadowski·Marcus Zenger·Dieter Weiss·Werner Wegscheider
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Abstract

Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk semiconductor ($n$-GaAs) via schottky contact. For detection, a diluted magnetic semiconductor ($p$-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the $p$-$n$ junction.

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Peifeng Chen, Juergen Moser, Philipp Kotissek, Janusz Sadowski, Marcus Zenger, Dieter Weiss, Werner Wegscheider. 2006-08-21. All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode. https://doi.org/10.1103/physrevb.74.241302

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