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Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs

J. Hübner·S. Döhrmann·D. Hägele·M. Oestreich
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Abstract

Very high precision measurements of the electron Lande g-factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature dependent effective mass a temperature dependence of the interband matrix element within a common five level kp-theory can model both parameters consistently. A strong decrease of the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.

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J. Hübner, S. Döhrmann, D. Hägele, M. Oestreich. 2009-05-06. Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs. https://doi.org/10.1103/physrevb.79.193307

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