Spin-dependent transport in the p-type ultra-narrow silicon quantum well

N. T. Bagraev; M. I. Bovt; W. Gehlhoff; O. N. Guimbitskaya; L. E. Klyachkin; A. M. Malyarenko; V. A. Mashkov; V. V. Romanov; S. A. Rykov

arXiv · cond-mat/0608628

Spin-dependent transport in the p-type ultra-narrow silicon quantum well

N. T. Bagraev·M. I. Bovt·W. Gehlhoff·O. N. Guimbitskaya·L. E. Klyachkin·A. M. Malyarenko·V. A. Mashkov·V. V. Romanov·S. A. Rykov

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Abstract

We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher conductance oscillations caused by the Rashba spin-orbit interaction are found to interplay with the quantization phenomena induced by the creation of the two-dimensional subbands in Si-QW and the quantum subbands due to the Andreev reflection from the superconductor barriers.

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N. T. Bagraev, M. I. Bovt, W. Gehlhoff, O. N. Guimbitskaya, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, V. V. Romanov, S. A. Rykov. 2006-08-29. Spin-dependent transport in the p-type ultra-narrow silicon quantum well. https://arxiv.org/abs/cond-mat/0608628

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