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Spin-dependent transport in p+-CdBxF2-x - n-CdF2 planar structures

N. T. Bagraev·M. I. Bovt·O. N. Guimbitskaya·L. E. Klyachkin·A. M. Malyarenko·A. I. Ryskin·A. S. Shcheulin
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Abstract

The CV measurements and tunneling spectroscopy are used to study the ballistic transport of the spin-polarized holes by varying the value of the Rashba spin-orbit interaction (SOI) in the p-type quantum well prepared on the surface of the n-CdF2 bulk crystal. The findings of the hole conductance oscillations in the plane of the p-type quantum well that are due to the variations of the Rashba SOI are shown to be evidence of the spin transistor effect, with the amplitude of the oscillations close to e2/h.

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N. T. Bagraev, M. I. Bovt, O. N. Guimbitskaya, L. E. Klyachkin, A. M. Malyarenko, A. I. Ryskin, A. S. Shcheulin. 2006-08-29. Spin-dependent transport in p+-CdBxF2-x - n-CdF2 planar structures. https://doi.org/10.1088/1742-6596%2F61%2F1%2F013

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