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Strain induced pressure effect in pulsed laser deposited thin films of the strongly correlated oxide V2O3

S. Autier-Laurent·B. Mercey·D. Chippaux·P. Limelette·Ch. Simon
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Abstract

V2O3 thin films about 10 nm thick were grown on Al2O3 (0001) by pulsed laser deposition. The XRD analysis is in agreement with R-3c space group. Some of them exhibit the metal / insulator transition characteristic of V2O3 bulk material and others samples exhibit a metallic behavior. For the latter, the XPS analysis indicates an oxidation state of +III for vanadium. There is no metal / insulator transition around 150 K in this sample and a strongly correlated Fermi liquid rho = AT2 behavior of the resistivity at low temperature is observed, with a value of A of 1.2 10-4 ohm cm, 3 times larger than the bulk value at 25 kbar.

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S. Autier-Laurent, B. Mercey, D. Chippaux, P. Limelette, Ch. Simon. 2006-09-14. Strain induced pressure effect in pulsed laser deposited thin films of the strongly correlated oxide V2O3. https://doi.org/10.1103/physrevb.74.195109

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