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Nuclear Spin Switch in Semiconductor Quantum Dots

A. I. Tartakovskii·T. Wright·A. Russell·V. I. Fal'ko·A. B. Van'kov·J. Skiba-Szymanska·I. Drouzas·R. S. Kolodka·M. S. Skolnick·P. W. Fry·A. Tahraoui·H. -Y. Liu·M. Hopkinson
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Abstract

We show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a threshold-like enhancement or reduction of the local nuclear field by up to 3 Tesla can be generated by varying the intensity of light. The excitation power threshold for such a nuclear spin "switch" is found to depend on both external magnetic and electric fields. The switch is shown to arise from the strong feedback of the nuclear spin polarization on the dynamics of spin transfer from electrons to the nuclei of the dot.

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A. I. Tartakovskii, T. Wright, A. Russell, V. I. Fal'ko, A. B. Van'kov, J. Skiba-Szymanska, I. Drouzas, R. S. Kolodka, M. S. Skolnick, P. W. Fry, A. Tahraoui, H. -Y. Liu, M. Hopkinson. 2006-09-15. Nuclear Spin Switch in Semiconductor Quantum Dots. https://doi.org/10.1103/physrevlett.98.026806

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