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Thermoelectric transport perpendicular to thin film heterostructures using Monte Carlo technique

Mona Zebarjadi·Ali Shakouri·Keivan Esfarjani
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Abstract

The Monte Carlo technique is used to calculate electrical as well as thermoelectric transport properties across thin film heterostructures. We study a thin InGaAsP barrier layer sandwiched between two InGaAs contact layers, when the barrier thickness is in 50nm-2000nm range. We found that with decreasing size, the effective Seebeck coefficient is increased substantially. The transition between pure ballistic thermionic transport and fully diffusive thermoelectric transport is also described.

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Mona Zebarjadi, Ali Shakouri, Keivan Esfarjani. 2006-10-03. Thermoelectric transport perpendicular to thin film heterostructures using Monte Carlo technique. https://doi.org/10.1103/physrevb.74.195331

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