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Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

E. J. R. Oliveira·A. T. da Cunha Lima·M. A. Boselli·G. M. Sipahi·S. C. P. Rodrigues·I. C. da Cunha Lima
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Abstract

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials.

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E. J. R. Oliveira, A. T. da Cunha Lima, M. A. Boselli, G. M. Sipahi, S. C. P. Rodrigues, I. C. da Cunha Lima. 2006-10-10. Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures. https://doi.org/10.1063/1.2712809

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