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Interaction effects in the transport of two-dimensional holes in GaAs

Jian Huang·D. S. Novikov·D. C. Tsui·L. N. Pfeiffer·K. W. West
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Abstract

The power-law increase of the conductivity with temperature in the nominally insulating regime, recently reported for the dilute two-dimensional holes [cond-mat/0603053], is found to systematically vary with the carrier density. Based on the results from four different GaAs heterojunction-insulated-gate field-effect-transistor samples, it is shown that the power law exponent depends on a single dimensionless parameter, the ratio between the mean carrier separation and the distance to the metallic gate that screens the Coulomb interaction. This dependence suggests that the carriers form a correlated state in which the interaction effects play a significant role in the transport properties.

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Jian Huang, D. S. Novikov, D. C. Tsui, L. N. Pfeiffer, K. W. West. 2006-10-11. Interaction effects in the transport of two-dimensional holes in GaAs. https://arxiv.org/abs/cond-mat/0610320

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