Electrical spin injection into p-doped quantum dots through a tunnel barrier

L. Lombez; P. Renucci; P. Gallo; P. F. Braun; H. Carrere; P. H. Binh; X. Marie; T. Amand; B. Urbaszek; J. L. Gauffier; T. Camps; A. Arnoult; C. Fontaine; C. Deranlot; R. Mattana; H. Jaffres; J. M. George

doi:10.1063/1.2709889

arXiv · cond-mat/0610424

Electrical spin injection into p-doped quantum dots through a tunnel barrier

L. Lombez·P. Renucci·P. Gallo·P. F. Braun·H. Carrere·P. H. Binh·X. Marie·T. Amand·B. Urbaszek·J. L. Gauffier·T. Camps·A. Arnoult·C. Fontaine·C. Deranlot·R. Mattana·H. Jaffres·J. M. George

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Abstract

We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at low temperature in a 2T magnetic field, leading to an estimation of the electrical spin injection yield of 35%. Moreover, this electroluminescence circular polarization is stable up to 70 K.

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L. Lombez, P. Renucci, P. Gallo, P. F. Braun, H. Carrere, P. H. Binh, X. Marie, T. Amand, B. Urbaszek, J. L. Gauffier, T. Camps, A. Arnoult, C. Fontaine, C. Deranlot, R. Mattana, H. Jaffres, J. M. George. 2007-01-08. Electrical spin injection into p-doped quantum dots through a tunnel barrier. https://doi.org/10.1063/1.2709889

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