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Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

R. Seguin·A. Schliwa·S. Rodt·K. Pötschke·U. W. Pohl·D. Bimberg
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Abstract

A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $μ$eV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.

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R. Seguin, A. Schliwa, S. Rodt, K. Pötschke, U. W. Pohl, D. Bimberg. 2006-10-16. Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots. https://doi.org/10.1103/physrevlett.95.257402

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