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Ex-situ control of fine-structure splitting and excitonic binding energies in single InAs/GaAs quantum dots

R. Seguin·A. Schliwa·T. D. Germann·S. Rodt·K. Pötschke·U. W. Pohl·D. Bimberg
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Abstract

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over several steps of annealing. A systematic reduction of the excitonic fine-structure splitting is reported. In addition the binding energies of different excitonic complexes change dramatically. The results are interpreted in terms of a change of electron and hole wavefunction shape and mutual position.

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R. Seguin, A. Schliwa, T. D. Germann, S. Rodt, K. Pötschke, U. W. Pohl, D. Bimberg. 2006-10-17. Ex-situ control of fine-structure splitting and excitonic binding energies in single InAs/GaAs quantum dots. https://doi.org/10.1063/1.2730192

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